BFS460L6 aug-04-2004 1 npn silicon rf twin transistor ? high f t of 22 ghz ? for low voltage / low current applications ? ideal for vco modules and low noise amplifiers ? low noise figure: 1.1 db at 1.8 ghz ? world's smallest smd 6-pin leadless package ? excellent esd performance typical value > 1500v (hbm) ? built in 2 transistors (tr1, tr2: die as bfr460l3) * short-term description 1 2 3 4 5 6 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BFS460L6 ab 1=c1 2=e1 3=c2 4=b2 5=e2 6=b1 tslp-6-1 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 4.5 4.2 v collector-emitter voltage v ces 15 collector-base voltage v cbo 15 emitter-base voltage v ebo 1.5 collector current i c 50 ma base current i b 5 total power dissipation 1) t s 104c p tot 200 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 t s is measured on the collector lead at the soldering point to the pcb
BFS460L6 aug-04-2004 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 230 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5.8 - v collector-emitter cutoff current v ce = 15 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 1 a dc current gain i c = 20 ma, v ce = 3 v, pulse measured h fe 90 120 160 - 1 for calculation of r thja please refer to application note thermal resistance
BFS460L6 aug-04-2004 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 3 v, f = 1 ghz f t 16 22 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, emitter grounded c cb - 0.33 0.5 pf collector emitter capacitance v ce = 3 v, f = 1 mhz, base grounded c ce - 0.17 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, collector grounded c eb - 0.57 - noise figure i c = 5 ma, v ce = 3 v, z s = z sopt, f = 1.8 ghz i c = 5 ma, v ce = 3 v, z s = z sopt, f = 3 ghz f - - 1.1 1.4 - - db power gain, maximum stable 1) i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 3 ghz g ms - - 14.5 10 - - db transducer gain i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 3 ghz | s 21e | 2 - - 12.5 9 - - third order intercept point at output 2) v ce = 3 v, i c = 20 ma, z s = z l = 50 ? , f = 1,8 ghz ip 3 - 28 - dbm 1db compression point at output i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz p -1db - 12 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
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